Performance Limits of III–V Barrier Detectors

Abstract

Minority-carrier lifetimes and diffusion lengths have been deduced from a comparison of band structure simulations and experimental measurements on mid-wave infrared InAsSb XBn and long-wave infrared InAs/GaSb type II superlattice (T2SL) XBp barrier detectors with low diffusion-limited dark current close to mercury cadmium telluride Rule 07 and high quantum efficiency. For the XBn devices, a lifetime of 1.9 μs was observed with a corresponding diffusion length of 14.5 μm. In contrast, the T2SL exhibited a much shorter lifetime of 7.5 ns, but the diffusion length of ∼ 7 μm was long enough to ensure that almost 90% of the photocarriers are collected. The lifetime appears to be Auger limited in the case of n-type InAsSb, but for the p-type T2SL, Shockley–Read–Hall (SRH) traps appear to dominate. In the second case, possible scenarios for the dominance of SRH recombination are discussed to identify pathways for further performance optimization.