Abstract
Investigating the performance of power electronics devices and thus power inverters at cryogenic temperatures for electric aircraft systems are of great interest. Accordingly, the purpose of this study is to examine the inverter circuit technologies used in cryogenically-cooled electric aircraft applications from three perspectives: inverter topologies, power capabilities, and electromagnetic interference (EMI) that may occur. At a cryogenic temperature, the characteristics of five power semiconductor switches with different technologies (Si MOS, SiC MOS, and GaN HEMT) used in cryogenically-cooled electric aircraft inverters were tested and the results were presented. Furthermore, the low-temperature performance of three types of capacitors commonly used in power electronics inverters was investigated. The research findings provide crucial considerations for the research and development of power inverters cooled by sub-cooled liquid nitrogen for modern electric aircraft.
Highlights
Aircraft electrification has been gaining increased attention, pushing the modern aircraft industry toward hybrid or more electric aircraft and all-electric aircraft concepts [1,2]
Converting all non-propulsive systems into electric-based systems increases the number of power electronics components, including semiconductor switches, which may affect the rate of device failure and reliability
These switching devices operate at high switching frequencies, which may cause much higher levels of electromagnetic interference (EMI) and negatively affect avionic equipment [4]
Summary
Aircraft electrification has been gaining increased attention, pushing the modern aircraft industry toward hybrid or more electric aircraft and all-electric aircraft concepts [1,2]. These curves show that as the gate voltage increases, the drain current increases linearly to a certain level before remaining constant or saturated. Teristics of commercially available power switches at various gate-source voltages At cryogenic temperature (77 K) very low current is exhibited for SiC MOSFETs from (STMicroelectronics) and (Rohm) compared t8oofth13eir corresponding characteristics at room temperature (300 K).
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