Abstract

The simulation of multicomponent nanoheterostructures (MNH) InGaN for light-emitting diodes (LEDs) was made. The results are presented in graphs, for example, the current-voltage characteristics, the dependence of the internal quantum efficiency (IQE) on the number of quantum wells (QW) and spectral characteristics. The optimal structure of the MNH and the influence of the inhomogeneous distribution of In atoms in the quantum-well region is investigated.

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