Abstract
In optoelectronics and optical fiber communication, due to the wavelength coverage and the high sensitivity, InGaAs/InP avalanche photodiode (APD) has attracted more and more attentions. Herein, the InGaAsP/InP heterojunction was adopted in the multiplication layer. The absorption layer is composed of an intrinsic absorption layer and a depleted absorption layer. A new model of InGaAs/InP separate absorption, grading, charge and multiplication (SAGCM)-APD has been designed. The photocurrent, dark current and gain characteristics of the device were simulated. In addition, we also simulated the effect of heterojunction multiplication layer and charge layer on the punch-through voltage and break-down voltage of the device.
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