Abstract
Abstract Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors (CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.
Highlights
Carbon nanotube (CNT) is a fascinating material that shows resistance and piezo-resistive gauge factors, and they can be metallic or semiconducting behavior depending on its radius used as nanoscale pressure sensors [17]
In multi-walled CNT has been measured by applying strain using that experiment, strain was applied to a suspended nanotube atomic force microscope (AFM) tip [19]
The on-state current in Schottky contact devices is limited by the Schottky barrier, and the gate does not modulate much the potential profile when the potential under the gate goes below the source Fermi level
Summary
Carbon nanotube (CNT) is a fascinating material that shows resistance and piezo-resistive gauge factors, and they can be metallic or semiconducting behavior depending on its radius used as nanoscale pressure sensors [17]. We compare the performance of ballistic quasi-metallic nanotubes exhibit the largest changes in zero-Schottky-barrier and doped source-drain contacts carbon The switching performance of doped contact devices is better, and its variation with strain is sensitive to device source-drain contact type.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
