Abstract
AbstractIn this paper, we compare the performances of wet‐etched and dry‐etched Geiger‐mode avalanche photodiodes (GM‐APDs) using a single diffusion process at a wavelength of 1.55‐µm. The single‐diffused GM‐APD based on a wet recess‐etching has demonstrated the good performances of a dark count rate of 0.03 kHz/µm2 and a photon detection efficiency of 17.1% at 240 K. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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