Abstract
Quantum dot infrared photodetector (QDIP) has shown some good performances, for example, a high responsivity, a large detectivity, due to its quantum-dot nanostructure, and already attracted more and more attention in recent years. In this paper, a physical model used to evaluate the performance of the QDIPs under illumination condition is derived. This model supposes that the total electron transport and the self-consistent potential distribution determine together the performance of the QDIP under illumination, and the dependences of the drift velocity and the photoconductive gain on the applied electric field are also considered and included in this model. The corresponding results are calculated out and show a good agreement with the published results, which illustrates the validity and the correctness of the model.
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