Abstract
We have compared directly the performance of a Pb1−xSnxTe(In) photodetector with that of two other state-of-the-art far-infrared detectors: a Si(Sb) blocked impurity band (BIB) detector and a Ge(Ga) photoconductor in an integrating cavity. The Pb1−xSnxTe(In) photodetector has current responsivity SI several orders of magnitude higher than the Si(Sb) BIB at wavelength λ=14.5 μm. Persistent photoresponse with SI∼103 A/W at 40 mV bias and 1 s integration time at the wavelengths λ=90 and 116 μm has also been observed in the Pb1−xSnxTe(In) photodetector. This is larger by a factor of ∼100 than the responsivity of the Ge(Ga) photoconductor in the same conditions.
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