Abstract
The effects of copper permanent deformation during thermal cycles in backside through-silicon via (TSV)-last fabrication process are studied using an advanced 3-D simulator. The plasticity and creep model parameters are chosen to match experimental data. Two sets of different TSV configurations and back end of line (BEOL) layouts are utilized to examine TSV reliability, BEOL reliability, and front-end device performance after postplating thermal excursion. The results indicate that the copper plasticity deformation affects TSV stress distributions for TSV-last fabrication process. The configuration employing a thicker liner made of a softer material shows better TSV and BEOL reliability and lower TSV stress-induced device performance impact. It is also observed that the BEOL layout near the TSV edge needs to be optimized as the BEOL structures in this region experience larger mechanical stress and lower reliability.
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