Abstract
This paper investigates the RF Stability performance of the Double Gate Junctionless Tunnel Field Effect Transistor (DGJL-TFET). The impact of the geometrical parameter, material and bias conditions on the key figure of merit (FoM) like Transconductance (gm), Gate capacitance (Cgg) and RF parameters like Stern Stability Factor (K), Critical Frequency (fk) are investigated. The analytical model provides the relation between fk and small signal parameters which provide guidelines for optimizing the device parameter. The results show improvement in ON current, gm, ft and fk for the optimized device structure. The optimized device parameters provide guidelines to operate DGJL-TFET for RF applications.
Highlights
For the past four decades, the semiconductor industry is supplemented with CMOS devices due to the continuous growth of Semiconductor Technology
Influence of parameter fluctuations caused by process variations on the RF stability of Double Gate Tunnel FET (DG-Tunnel Field Effect Transistor (TFET)) is reported by k.sivasankaran.et al [30]
As well as interface trap effects in TFETs on the non-local band to band tunnelling, are considered by including quantum confinement (QC) model developed by Hansch [33][34] and Schenk [33][35] trap-assisted tunnelling (TAT) model
Summary
For the past four decades, the semiconductor industry is supplemented with CMOS devices due to the continuous growth of Semiconductor Technology During this regime, the silicon device physical dimensions were reduced to nanometre domain and further scaling (Tens of Nanometre) is limited by Short Channel Effects (SCE) posed by CMOS devices [1,2,3,4,5,6]. Influence of high-k material on the RF stability performance of Double Gate Junctionless FET is studied [31] and proposed an optimized structure for the better RF performance [32].
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Advanced Computer Science and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
