Abstract
The cmp process is key to the uniformity of the thin film surface of wafers in semiconductor chip production. Retaining is an important process that is used in the field to maintain the surface of a thin film uniformly during wafer polishing; additionally, a ring is used in a style that facilitates the bonding of metal and plastics in various processes. This results in an extended manufacturing period and the adhering and subsequent solidification of the slurry to the diameter of the inner surface of the metal, which results in a scratch on the wafer owing to arbitrary dropout.
 This study aimed to replace the existing method by developing an injection-type insert-embedded ring to address the aforementioned challenge. Thermal stress tests for the accurate injection of polyetheretherketone materials detected phenol, phenyl ether, and dibenzofuran components using Py-Gc/MS. DSC analysis showed that the glass transition temperature was as high as 150 °C and the melting temperature was 342 °C. During TG-DTA, the heat weight was reduced by 50%, and the change in the calorific value of the peak occurred at 585.1 °C when the heating and cooling rates were constant.
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