Abstract
The interaction of copper with PECVD silicon oxynitride films were investigated by different analytical and electrical methods. Using AES-depth profiling and RBS measurements, no copper diffusion in films investigated was observed after applying a thermal stress of 450°C for 1 h. However, copper migration was detected after applying thermal and electrical stress simultaneously (BTS). C-V and I-V measurements before and after different BTS-conditions were performed on MIS-structures. Additionally, the time to breakdown was studied as a function of thermal and electrical stresses. From the resulting arrhenius plots the activation energies for the lowest electric fields applied were determined to be 1.85 eV for SiN and 1.3 eV for SiO. The polarity dependence of leakage current for both materials studied suggests a Cu ion drift transport mechanism. From all materials investigated, silicon nitride showed the best barrier behaviour against copper interaction.
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