Abstract
By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of 1017 cm-3, and the Hall mobility was 2.83 cm2 V-1 s-1. The resulting on-current/off-current ratio was more than 102, and the field-effect mobility was approximately 4×10-5 cm2 V-1 s-1.
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