Abstract
Anti-Ferroelectric Materials Anti-ferroelectric materials have attracted attention of researchers due to their high energy storage density. Article number 2202044 by Xianwei Wang and co-workers reviews the recent progress of PZ-based anti-ferroelectric films for energy storage, and provides various ways, such as element modification, composite materials, and process improvement, to improve their energy storage density. The problems and future development directions of the PbZrO3-based films are raised.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.