Abstract
A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200–500 keV helium ions to a fluence range of 2–4×1016 He+/cm2 at room temperature through masks of Ni mesh (40 μm opening) or stainless steel wire (50 μm in diameter), and subsequent rapid thermal annealing at 350–500□ resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.
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