Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage

Abstract

The works on the partitioning of very hard semiconductor sapphire wafers with a diameter of 52 mm and thickness of 90 μm into monolithic integrated circuits (MICs) have been carried out using lasercontrolled thermal cleavage (LCT). The studies have been carried out and the works on cutting polycrystalline diamond wafers have been performed, as a result of which a method to partition the wafers into crystals, i.e., the laser plasmochemical method of cutting, is proposed, the basic advantage of which is the absence of the material bursting out from the cutting region and its deposition onto already formed device structures.