Abstract
AbstractThe ordinary continuum model cannot be applied to analysis of submicron device performances because carriers are in non‐equilibrium state. This difficulty has been overcome by particle simulations applied to analysis of Si and GaAs MESFET's. the effect of the velocity overshoot on the device characteristics has been found. the continuum model is applicable to Si devices up to gate length 0.1 μm. On the other hand, the nonequilibrium effect of the carriers becomes remarkable in GaAs devices when the gate length is 1.0 μm; in such a case high‐speed operation is expected because the carrier velocity is not restricted to its saturation value.
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