Abstract
Strain relaxation in In 0.045Ga 0.955As epilayers grown by molecular beam epitaxy on (0 0 1) oriented GaAs substrates has been observed by monochromatic synchrotron X-radiation topography. A striation pattern parallel to the [1 1 0] direction was observed in all topographs of a sample grown in a non-uniform temperature distribution. Such a pattern has never been observed in specimens grown with a uniform temperature across the wafer. From a detailed analysis of the contrast, it is concluded that twins were formed. These twins, which were associated with oval defects, appear to relax a small proportion of the strain in the epilayer without dislocation formation.
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