Abstract
It is required to simulate the performance of a photovoltaic solar cell performance to enhance it. Simulation optimization has the benefit of being inexpensive and straightforward, and it allows us to identify the optimum parameters that contribute to the enhancement of the cell. An alternative ZnSe/CdS/CIGS/Si structure has been presented using a solar cell capacitance simulator (SCAPS-1D). This paper aims to increase device efficiency by improving the physical characteristics of the many layers involved in cell realisation. We also tried to investigate the variation of electrical characteristics such as Voc, Jsc, , and FF with the changes in material parameters, notably the absorber layer thickness (CIGS, p-Si) (CIGS, p-Si). On the other hand, the temperature dependency has been simulated to guide device manufacturers to attain higher efficiency in varied temperature circumstances. The calculation result shows that excellent performance can be reached by varying the parameters, and the highest efficiency (24,94 %) of the solar cell can be reached under certain conditions, where the thicknesses of ZnSe, CdS, CIGS, and Si are 0.2m, 0.09m, 1.4m, and 0.6m respectively and for the optimal value of temperature equal to 295K.
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