Abstract
From quantum simulations of both capacitance and current measurements, the main physical parameters (dielectric thickness and permittivity, doping levels) of hafnium based (HfSiO x and HfO 2) gate oxide capacitors have been extracted. Three kinds of gates (n +-polysilicon, totally silicided (TOSI) NiSi and metal TiN gates) have been studied. In the case of thick (EOT between 11.1 and 12.3 nm) HfSiO x gate oxides or thin (EOT inferior to 2 nm) HfO 2 stacks with n +-polysilicon or TiN gates, a good agreement between simulations and experimental data is obtained. Electron tunneling currents are prevalent in these stacks except for the specific case of TiN/HfO 2 stacks in p-substrate accumulation mode. In this case, electron and hole tunneling transparencies become of the same order of magnitude. Hole transport contribution can no more be neglected and should be taken into account in simulations.
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