Abstract
We proposed the calibration procedure of a‐InGaZnO Thin Film Transistors (a‐IGZO TFTs) using Technology Computer Aided Design (TCAD) simulation. The various channel lengths of 5.2μm, 7.3μm, 30.3μm, 50.6μm, 81μm, and 152.2μm are fabricated and used for verifying the calibration results. The parameters of obtained from 152.2μm channel length TFT are applied to other devices with different channel lengths. From manufacturing point of view, we extracted the value of channel length reduction of TFTs from the output characteristics using TCAD simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
