Abstract

AbstractWe have developed 3‐D stacked complementary TFT devices using n‐type α‐IGZO and p‐type F8T2 TFTs on PET substrates. We confirmed proper I‐V characteristics of both the α‐IGZO and F8T2 TFTs and correct input‐output characteristics of both NOT and NAND logic circuits. The operation confirmation of the NAND logic circuit suggests that any advanced logic circuit can be composed using these complementary TFT devices.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.