Abstract
Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO2 nanomaterials. In the present work, anatase TiO2 nanofilms doped with Al and V elements were fabricated through anodic oxidation of Ti6Al4V alloy and further annealing treatment. Hydrogen sensing behavior of the crystallized Ti-Al-V-O nanofilms at various working temperatures was investigated through exposure to 1,000 ppm H2. Different from n-type hydrogen sensing characteristics of undoped TiO2 nanotubes, the Al- and V-doped nanofilms presented a p-type hydrogen sensing behavior by showing increased resistance upon exposure to the hydrogen-containing atmosphere. The Ti-Al-V-O nanofilm annealed at 450°C was mainly composed of anatase phase, which was sensitive to hydrogen-containing atmosphere only at elevated temperatures. Annealing of the Ti-Al-V-O nanofilm at 550°C could increase the content of anatase phase in the oxide nanofilm and thus resulted in a good sensitivity and resistance recovery at both room temperature and elevated temperatures. The TiO2 nanofilms doped with Al and V elements shows great potential for use as a robust semiconducting hydrogen sensor.
Highlights
As a clean and renewable energy carrier, hydrogen has wide applications in the industry such as chemical production and fuel cell, as well as high-energy fuel [1]
The oxide nanofilms consisted of two kinds of nanostructures, i.e., nanotubes grown at the αphase region and inhomogeneous nanopores grown at the β-phase region [22]
Our X-ray photoelectron spectroscopy (XPS) analyses could only indicate the chemical valence states of Al and V elements rather than proof for the Al and V doping in the lattice of TiO2 oxide, our X-ray diffraction (XRD) analyses revealed that the main diffraction peaks
Summary
As a clean and renewable energy carrier, hydrogen has wide applications in the industry such as chemical production and fuel cell, as well as high-energy fuel [1]. For these applications, a robust and reliable hydrogen sensor is needed to detect a leakage during storage and transportation. The hydrogen sensor should work at elevated temperatures To meet these targets, various kinds of hydrogen sensors based on MOSFET, catalytic combustion, electrochemical reaction, Pd metals, and semiconducting metal oxides have been reported [2,3,4,5,6,7,8].
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