P-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn[sub 0.11]Mg[sub 0.89]O thin films

Abstract

N-doped, Li-doped, and Li–N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMgO. Li doping produces high-resistivity p-type ZnMgO films, whereas N doping produces ZnMgO films with indeterminate carrier type. In contrast, Li–N codoping results in low resistivity and stable p-type ZnMgO films. The enhancement by Li and N coincorporation is investigated by secondary ion mass spectroscopy and is possibly responsible for the good p-type conduction in Li–N dual-acceptor doped Zn0.89Mg0.11O.