Abstract
High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with mesh patterned GaAs contact layers were fabricated. P-GaP was served as a current spreading and a window layer. P-GaP/AlGaInP/GaAs structures were epitaxially grown using metal organic chemical vapor deposition technique. Two-time-transferring technique lets p-GaP layer remain at the top side of each structure for better current spreading. Moreover, the GaAs contact layer had been further processed to mesh pattern structure and transferred to the rear-side of each device. Comparing two types of AlGaInP LEDs with and without mesh pattern shows a significant improvement in output power and luminous for mesh patterned GaAs devices.
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