P-MOSFET and n-MOSFET prepared by ICP-assisted hot wire implantation doping technique

Abstract

In this letter, p-type and n-type metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated using an inductively coupled plasma-assisted hot wire implantation doping technique. A complementary metal–oxide–semiconductor (CMOS) device that combines p- and n-MOSFETs was also fabricated. The obtained junction depth of the p-MOSFETs was $\sim 45$ nm. The subthreshold slope and ON–OFF current ratio of the p-MOSFET were $\sim 0.18$ V/decade and over $10^{4}$ , respectively. The measurements made of the CMOS device show that it is a good inverter.