Abstract
Based on previous work, the ultraviolet HEMT‐LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p‐GaN selection size. P‐GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2‐dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p‐GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods.
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