Abstract
Patterned quantum dots light‐emitting diodes (QLED) with sputtered IGZO films as electron transport layers are fabricated. The pattered IGZO films can define pixels ~10 μm, while accompanied by the nonuniform current spreading effect. The localized current density distribution observed by luminance distribution during the aging degrades the device seriously. In order to overcome this issue, the patterned SiO2 layer as the bank is introduced. This work also shows a potential way to tune the out couple efficiency and micro‐cavity effect (optical length) in QLED by charge transport layer thickness.
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