Abstract
Transition metal oxide TFTs were fabricated on a fabric substrate for wearable display. Atomic layer deposition (ALD) was employed to reduce process temperature. The gate electrode (Ti/Al/Ti) was deposited by thermal evaporation. The gate insulator and channel layer were Al2O3 and ZnO, respectively. Ti/Al was deposited by thermal evaporation to make the source and drain contacts for ZnO TFTs. The TFT fabricated on the fabric substrate showed TFT driving behavior with the following performances: µFE = 0.6 cm2/V‐s, on off ratio = 9.07×102, Subthreshold Swing = 1.725 decade‐1, Vth = ‐1.57 V. The results confirmed that it may be feasible to apply our low temperature fabrication of TFTs using the ALD process to wearable displays based on fabric substrates.
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