Abstract
Self‐aligned top‐gate a‐ZrInZnO TFTs are fabricated by cosputtering, the devices show a high device performance, including a field‐effect mobility of 8.9 cm2/(V·s), and a small subthreshold slope of 0.38 V/dec. Furthermore, the ZrInZnO TFTs show excellent stress stability with a low Vth shifting, especially the negative bias illumination stress‐induced stability.
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