P‐1.5: High‐Voltage characteristics of Top‐Gate Amorphous InGaZnO Thin‐Film Transistors

Abstract

In this paper, we investigated high‐voltage characteristics of topgate amorphous InGaZnO thin‐film transistors. Results indicate that the saturation current decreases at high drain bias. Moreover, the threshold voltage (Vth) positive shift after device biased at the high drain voltage and the shift magnitude become larger at shorter channel length devices. These observations are attributed to the fact that hot electrons were produced due to the strong drain to source electric field and trapped in the gate insulator. The device performance was recovered after 1000‐s negative gate bias at 60 °C.