Abstract
Oxygen deficient SnO 2 (110) and TiO 2 (110) surfaces prepared by argon ion bombardment of stoichiometric crystals have been studied by He(I) photoemission spectroscopy. On TiO 2 (110), 3 d 1 polaronic states localised at crystallographic shear planes give rise to a band peaking 1 eV below the Fermi level. By contrast for SnO 2 (110) there is strong 5 s−5 p hybridisation that pushed the Sn 2+ lone-pair-like defect state down toward the valence band edge.
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