Abstract
We report the preparation of Tc-optimized Bi2Sr2Ca1Cu2O8+δ thin films on SrTiO3 substrates using a planar dc-sputtering method. The oxygen content of these films is adjusted in situ by controlling the oxygen flow during sputtering. The oxygen content can be varied continuously from the overdoped state (Tc=72 K) to the condition with optimum oxygen content (Tc=88 K), and further, to the underdoped state (Tc=76 K). The oxygen content is determined by x-ray measurements of the c-axis lattice parameter.
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