Abstract
Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy(1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated.Electrical characterization of metal–insulator–semiconductor capacitors reveals thatoxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfercharacteristics between the substrate and the silicon nitride layer compared to dielectricstacks using unimplanted silicon nitride. Attractive results are obtained in terms ofwrite/erase memory characteristics and data retention, indicating the large potentialof the low-energy ion-beam-synthesis technique in SONOS memory technology.
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