Abstract
Oxidation of polycrystalline Ti3SiC2 was investigated at 1000°C by XRD and SEM. Results show that a thin SiO2-rich scale forms after short-term oxidation, but it cannot prevent further oxidation effectively. The TiO2 content increased with increasing time and covered the whole surface eventually. For the long-term oxidation, the oxide scales are layered, the outer layer is comprised of pure TiO2, while the inner layer is a mixture of TiO2 and SiO2. The position of the pre-formed SiO2 layer indicates that it can serve as an initial marker for the subsequent oxidation.
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