Abstract
Oxidation of SiC in both air and water–vapor–rich environments was carried out at 1200°C to examine the effects of different oxidation conditions on the early-stage oxidation behavior of SiC. Two different types of SiC oxidation behavior were found, passive or active, depending on the oxidation environment. All the samples possessed amorphous oxide layers, regardless of the oxidation environment. Three Si oxidation states (SiO, Si2O3, and SiO2) were observed in this layer. The amorphous Si2O3 state was dominant, and the ratio of the three different states changed with the test conditions.
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