Abstract
Inverted organic solar cells generally exhibit a strong s‐shaped kink in the current–voltage characteristics (JV curve) that may be removed by exposure to UV light (light‐soaking) leading to a drastically improved performance. Using in‐device characterization methods the origin of the light‐soaking issue in inverted solar cells employing titanium dioxide (TiO2) as an electron selective layer is clarified. An injected hole reservoir accumulated at the TiO2/organic interface of the pristine device is observed from extraction current transients; the hole reservoir increases the recombination and results in an s‐shape in the JV curve of pristine devices. The hole reservoir and the s‐shape is a result of the energetics at the selective contact in the pristine device; the effect of UV exposure is to decrease the work function of the indium tin oxide/TiO2‐contact, increasing the built‐in potential. This hinders the build‐up of the hole reservoir and the s‐shape is removed. The proposed model is in excellent agreement with drift‐diffusion simulations.
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