Abstract
Ba ( Sn 0.02 Ti 0.98) O 3 thin films (BTS) were prepared by sol–gel route and deposited by spin-coating on commercial Pt / Ti / SiO 2/ Si substrates. By modifying the annealing conditions from 750°C at 1 h to 950°C at 15 min, the relative tunability nr at 100°C in the paraelectric state increased from 45 to 70% while the DC dielectric permittivity ε′(0) increased as well. The evolutions of ε′(E) and nr(E) are explained from Devonshire thermodynamic formalism. The very high value of tunability of 70% is explained by the grain size increase of our BTS thin films and the decrease of the dead layer effect when the annealing conditions are optimized.
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