Abstract
In semiconductor science, Mg is used as a dopant in as-grown $n$-type GaN, not only to compensate the native electrons, but also to attain a reasonable hole concentration. However, Mg doping leads to defects that emit blue light, and the precise origin of this emission process needs to be understood, so that it can be eliminated. Here a detailed experimental and theoretical analysis identifies the formation of defect complexes consisting of interstitial and substitutional Mg in GaN. This study, performed on a large-surface-area network of GaN nanowalls exhibiting enhanced band-edge emission, also suggests growth conditions for fabricating $p$-type GaN with a high hole concentration.
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