Abstract
Polycrystalline Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) thin films with (100) preferential and random orientation are prepared on the LaNiO3 electrodes coated on Si substrates by chemical solution deposition process. The results show that the two types of films stabilize in the pure perovskite structure. The ferro-paraelectric phase transitions of two types of films occur at the temperature ranges of 280.2-297.8 K and 278.4-287.6 K, respectively. The dielectric constant, relaxation time and tunability of the random orientation film are smaller than those of the (100) preferential film but both almost have the similar leakage current characteristics. The mechanism associated with the change of the electrical properties of the thin films is also discussed.
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More From: Journal of Materials Science: Materials in Electronics
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