Abstract
To design a high performance BaTiO3 (BTO)-integrated Si modulator, understanding how BTO domain orientations influence its electro-optical (EO) properties is crucial. The 100-nm-thick BTO films with c-oriented and a-oriented domains are obtained by exploiting various thickness of SrTiO3 buffer layers grown on Si(001) substrates. Then, the electro-optical behavior for 2 differently oriented samples is analyzed using spectroscopic ellipsometry.
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