Abstract
CH3NH3PbI3 thin film was deposited by a dual-source evaporation system under high vacuum (~10−4 Pa). The crystallographic phase of the thin film was determined by X-ray diffraction and its perovskite structure was confirmed. The crystal of annealed perovskite film was extremely smooth and significantly larger than that of as-deposited. The optical property of the thin film was investigated in the spectral range 300–1800 nm. By analyzing the absorption coefficient (α), the optical band gap (1.58 eV) and Urbach energy (0.082 eV) were revealed. The Al/CH3NH3PbI3/ITO Schottky diode was fabricated in order to explore the potential applications of CH3NH3PbI3. The basic device parameters, barrier height and ideality factor were determined by the current–voltage (I–V) measurement. It can be found that the charge transport was governed by space-charge-limited current mechanism by studying the forward bias characteristic.
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