Abstract
We report the fabrication and the optical properties of dense arrays of strained InGaAs/GaAs V-groove quantum wires (QWRs) embedded in wavelength size planar Bragg microcavities, made using a two-step organometallic chemical vapor deposition (OMCVD). Growth front evolution and top surface morphology of GaAs on the corrugated substrate were investigated as a function of the growth temperature (550–625°C) and the pitch of the V-groove grating (3–0.25 μm). Based on these studies, a growth temperature of 550°C and a grating pitch of 0.25 μm were selected to achieve sizes compatible with simultaneous quantum confinement for electron (≈10 nm wide wires) and photon (≈0.25 μm thick cavities) states. Reference arrays of uniform, nanometer-size, crescent-shaped, InGaAs QWRs with densities up to 4QWRs/μm were realized, exhibiting a narrow (8 meV) and intense emission from one-dimensional excitonic states at low temperature. Similar QWRs were then successfully embedded in planar microcavities, showing brighter (×50) emission with a strongly reduced linewidth (1 meV) due to resonant coupling between the wire emission and the microcavity modes.
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