Abstract
We study the low-temperature magnetoresistance in thin, high-quality MnAs layers on GaAs. The ordinary Hall effect depends sensitively on the epitaxial orientation of the MnAs layer. We use a simplified model to interpret the sign reversal of the Hall resistivity as a function of the magnetic field together with the large positive magnetoresistivity. For ${A}_{0}\ensuremath{-}\mathrm{o}\mathrm{r}\mathrm{i}\mathrm{e}\mathrm{n}\mathrm{t}\mathrm{e}\mathrm{d}$ MnAs films with the c axis oriented in the plane, we conclude that the low-temperature carrier transport is dominantly holelike at zero magnetic fields, which then undergoes a transition to mixed holelike and electronlike conductivity at high magnetic fields. MnAs films with an out-of-plane oriented c axis show a mixed carrier conductivity already at zero magnetic fields. The possible influence of interface/surface scattering in high-quality MnAs layers on the transfer of holelike to electronlike conductivity is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
