Abstract
Anisotropy in lattice thermal conductivity (κL) of crystals usually originates from anisotropic crystal structure that intrinsically enables direction-dependent thermal propagating velocity, yet the κL-anisotropy can be easily removed in polycrystalline materials because of the random orientation of grains. The extrinsic anisotropic strain fields ordering of high-dimension (1D/2D) defects, would in principle, even in polycrystalline materials, offer additional degree of freedom for manipulation of κL-anisotropy. Here, we demonstrate this concept and realize a significant enhancement in κL-anisotropy in polycrystalline (GeTe)m(Bi2Te3)n through ordered 1D/2D defects induced by high-concentration vacancies. The resultant κL-anisotropy is about two times larger than that of GeTe. The composition dependent κL can be well described by a phonon-defect scattering model, enabling an effective strategy for manipulating the anisotropy of heat transport through a structural control of ordered high-dimension defects.
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