Abstract
Photothermal deflection is used to investigate the electronic transport in a pn silicon solar cell. The dependence of the deflection signal on an external bias voltage in the closed circuit and on additional bias illumination in the open-circuit case is simulated successfully with a semimicroscopic approach using the expressions for the current voltage characteristics obtained from the diode theory. The experimental results on various crystalline silicon solar cells demonstrate the ability of the method for contactless all-optical characterization of photovoltaic interfaces.
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