Abstract
This paper presents an optimized designs of wide band traveling wave photodetectors grown on InP for operation in the optical communications wavelength region of 1.55 micrometers . Traveling wave photodetector devices exhibit inherently wide band frequency responses that are not limited by the usual RC time constant seen with vertically illuminated detectors. The factors limiting the performance of the traveling wave photodetectors are carrier transit time, microwave-optical phase velocity-mismatch and microwave loss. A discussion of key design parameters related to the maximization of the bandwidth is presented, including the choice of semiconducting heterostructure layers, device architecture, phase velocity matching between the optical and microwave signals and the trade off between slow-wave effects and microwave losses. Device modeling and numerical simulations were performed using the Method of Lines, which is a rigorous full-wave numerical technique for modeling electromagnetic fields. These results were corroborated using a commercially available CAD package based on the Finite Difference Beam Propagation Method.
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