Abstract
Metal halide perovskite nanocrystal (PNC) light-emitting devices (LEDs) are promising in the future ultra-high-definition display applications due to their tunable bandgap and high color purity. Balanced carrier injection is indispensable for realizing highly efficient LEDs. Herein, cobalt (Co) was doped into ZnO to modulate the electron mobility of a pristine electron transport layer (ETL) and to inhibit exciton quenching at the ZnO/EML interface due to the passivation of oxygen vacancies and the reduction of electron concentration resulting from the trapping of electrons by the Co2+-induced deep impurity level. Also, the bandgap was widened due to the size confinement effect. All of those were beneficial to achieve a balanced charge injection during the operating process. Consequently, the maximum luminance increased from 867 cd m-2 for ZnO LEDs to 1858 cd m-2 for Co-doped ZnO LEDs, and there was a 70% increase of external quantum efficiency (EQE). By further inserting a polyethylenimine (PEI) layer in the Co-doped ZnO LEDs, the EQE reached 13.0%.
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