Abstract
We have obtained a tenfold improvement in the reliability of InGaAsP/InP buried heterostructure laser diodes having a dry-etched mesa structure by optimizing the composition of a etchant to produce smooth mesa sidewalls, thus reducing the number of defects at regrowth interfaces. The optimal etchant, which has a composition in the range from 0.30 M HBr/0.022 M to 0.50 M HBr/0.020 M etches both the InP cladding layers and the InGaAsP multi-quantum-well active layer at the same rate. We propose a simple model of the etching process that is consistent with the observed etching characteristics. We found that the etching rate was controlled by the diffusion of molecules, which act as oxidizing agents. © 2003 The Electrochemical Society. All rights reserved.
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