Abstract
The purpose of this study is to introduce preliminary results on in situ heating control within new thin silicon film N-MOSFET device in 28 nm FD-SOI UTBB high-k metal gate technology. This evaluation is based on 3D TCAD simulations with classical electro-thermal physical models and on silicon sample measurements. It highlights that the device is functional and could be used for low and ultra-low temperature design solutions in harsh application environment.
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